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| 2SK3608-01L,S,SJ FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol VDS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Ratings 200 170 13 52 30 13 175 20 5 1.67 50 +150 -55 to +150 Unit V V A A V A mJ kV/s kV/s W Equivalent circuit schematic Drain(D) Gate(G) Source(S) Operating and storage Tch C temperature range Tstg C *1 L=1.65mH, Vcc=48V *2 Tch <150C *3 IF < -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C = = = = *4 VDS < 200V *5 VGS=-30V = Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=200V VGS=0V VDS=160V VGS=0V VGS=30V VDS=0V ID=6.5A VGS=10V ID=6.5A VDS=25V VDS=75V VGS=0V f=1MHz VCC=48V ID=6.5A VGS=10V RGS=10 VCC=100V ID=13A VGS=10V L=100H Tch=25C IF=13A VGS=0V Tch=25C IF=13A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C 10 131 11 770 110 5 12 2.6 22 6.1 21 8 5 1.10 0.15 0.88 Min. 200 3.0 Typ. Max. 5.0 25 250 100 170 1155 165 7.5 18 3.9 33 9.2 31.5 12 7.5 1.65 Units V V A nA m S pF 5.5 ns nC 13 A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 2.5 75.0 Units C/W C/W www.fujielectric.co.jp/denshi/scd 1 2SK3608-01L,S,SJ Characteristics Allowable Power Dissipation PD=f(Tc) 70 300 FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=13A 60 250 50 200 EAV [mJ] 40 PD [W] 150 30 100 20 50 10 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 Tc [C] starting Tch [C] Typical Output Characteristics ID=f(VDS):80s Pulse test,Tch=25C 40 35 30 25 20V 10V 8V 7.5V 10 100 Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C ID [A] 20 6.5V 15 ID[A] 1 0.1 0 7.0V 10 5 0 0 2 4 6 8 6.0V VGS=5.5V 10 12 1 2 3 4 5 6 7 8 9 10 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 100 0.40 0.35 0.30 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C VGS= 6.0V 5.5V 6.5V 7.0V 7.5V 8V 10V RDS(on) [ ] 10 0.25 0.20 0.15 20V gfs [S] 1 0.10 0.05 0.1 0.1 0.00 0 5 10 15 20 25 30 35 40 1 10 100 ID [A] ID [A] 2 2SK3608-01L,S,SJ FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6.5A,VGS=10V 500 450 400 7.0 6.5 6.0 5.5 5.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 A RDS(on) [ m ] VGS(th) [V] 350 300 250 max. 200 150 typ. 100 50 0 -50 -25 0 25 50 75 100 125 150 max. 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. Tch [C] Tch [C] Typical Gate Charge Characteristics VGS=f(Qg):ID=13A, Tch=25C 14 12 10 10 -1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 0 Ciss VGS [V] 8 Vcc= 100V 6 4 2 0 0 10 20 30 40 C [nF] Coss 10 -2 Crss 10 -3 10 -1 10 0 10 1 10 2 Qg [nC] VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s Pulse test,Tch=25C 100 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V, VGS=10V, RG=10 10 10 2 tf IF [A] t [ns] td(off) td(on) 10 1 1 tr 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 10 0 VSD [V] 10 -1 10 0 10 1 10 2 ID [A] 3 2SK3608-01L,S,SJ FUJI POWER MOSFET 10 1 Transient Thermal Impedance Zth(ch-c)=f(t):Duty=0 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C. Vcc=48V 10 0 Avalanche current IAV [A] 10 1 Single Pulse Zth(ch-c) [C/W] 10 -1 10 0 10 -2 10 -1 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -2 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 t [sec] tAV [sec] Outline Drawings (mm) FUJI POWER MOS FET OUT VIEW FUJI POWER MOS FET OUT VIEW FUJI POWER MOS FET See Note: 1. See Note: 1. Trademark Fig. 1. 4 See Note: 1. Trademark Trademark Fig. 1. Lot No. Lot No. Type name Lot No. Type name Type name PRE-SOLDER Fig. 1. Fig. 1. CONNECTION 1 4 2 3 GATE DRAIN SOURCE Solder Plating CONNECTION 1 42 3 GATE DRAIN SOURCE Solder Plating Pre-Solder CONNECTION Pre-Solder Notes 1. ( ) : Reference dimensions. 2. The metal part is covered with the solder plating, part of cutting is without the solder plating. DIMENSIONS ARE IN MILLIMETERS. Notes 1. ( ) : Reference dimensions. Note: 1. Guaranteed mark of avalanche ruggedness. 2. The metal part is covered with the solder plating, part of cutting is without the solder plating. DIMENSIONS ARE IN MILLIMETERS. 1 2 3 1 GATE 2 DRAIN 3 SOURCE Note: 1. Guaranteed mark of avalanche ruggedness. Note: 1. Guaranteed mark of avalanche ruggedness. DIMENSIONS ARE IN MILLIMETERS. 4 |
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